Diodes Incorporated has extended its line of ultra-small discrete products for space-critical product design. The company has announced a trio of small-signal MOSFETs in the tiny DFN0606 package: 20V and 30V rated N-channel transistors and a 30V rated P-channel part.
With a footprint measuring only 0.6mm x 0.6mm, each device takes 40% less board space than the commonly used DFN1006 (aka SOT883) packaged MOSFETs, making them an ideal choice for next-generation wearable tech, tablets and smartphones.
Able to deliver better or equivalent electrical performance than many of the larger package parts, the DMN2990UFZ (20V nMOS), the DMN31D5UFZ (30V nMOS) and DMP32D9UFZ (30V pMOS) have been designed to minimize on-state resistance while still maintaining a superior switching performance. In addition, a typical threshold voltage of less than 1V means a lower ‘turn-on’, suiting single-cell operation.
These tiny MOSFETs are well suited for high-efficiency power-management duties and as general-purpose interfacing and simple analog switches. Circuit power density gets a boost too, with the DFN0606 parts achieving a power dissipation of 300mW.